Mg-intercalated GaN superlattices enhancing the performance of AlGaN UVC LEDs
The aluminum gallium nitride (AlGaN) ultra-violet light-emitting diodes (UV LEDs) emitting at the UVC range render environmentally-friendly efficient sterilization, disinfection, and water purification. However, the high activation energy of magnesium (Mg) in p-AlGaN hinders the improvement of UVC LEDs. In this study, we demonstrate a Mg-delta doping in p-AlGaN to reduce the reverse leakage current and augment the light-output power of UVC LEDs. The UVC LEDs incorporating this design exhibit a significant reduction in reverse leakage current by 71% and a notable enhancement in light output power (LOP) compared to conventional devices. The Mg-intercalated GaN superlattices structure has been observed by scanning transmission electron microscopy (STEM), which will both increase the hole concentration and mobility in AlGaN, thus leading to an outperforming performance of UVC LEDs. • The 2D-magnesium-intercalated GaN superlattices (MiGs) has been realized in p-AlGaN by Mg-delta doping. • A reduction of 71% of the reverse leakage has been realized in UVC LEDs with the MiGs structure. • The LOP of UVC has been improved with the MiGs structure.
Authors
- Jason Hoo
- Zhangfeng Tao
- Xiangshou Zeng
- Guojian Ding (ORCID: https://orcid.org/0009-0008-9685-935X)
- Zian Dong
- Yangfeng Li
- Ni Ma
- Shiping Guo
- Qiao Wang
- Jun Li
- Bingdong Pan
- Xiaohui Wang
- Changde Luo
- Rong Yang
- Yang Wang
- Haiqiang Jia
Institutions
- Hunan University (CN)
- Changsha University (CN)
- Guangdong Academy of Sciences (CN)
- Songshan Lake Materials Laboratory (CN)
- Advanced Micro-Fabrication Equipment (China) (CN)
- Institute of Semiconductors (CN)
Publication Details
- Journal
- Journal of Luminescence
- Published
- 2025-12-22
- DOI
- https://doi.org/10.1016/j.jlumin.2025.121723
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00