Light-Programmable Reorientation of the Crystallographic <i>c</i> Axis of Tellurium Thin Films
Tellurium (Te), a two-dimensional material with pronounced structural anisotropy, exhibits exceptional electrical and optical properties that are highly sensitive to its crystallographic orientation. However, conventional syntheses offer limited control over the in-plane alignment of Te's crystallographic <i>c</i> axis, hindering large-scale integration. Here, we report a fundamentally different strategy to manipulate the <i>c</i>-axis orientation of Te thin films using linearly polarized picosecond laser pulses. We show that the <i>c</i> axis can be omnidirectionally reoriented perpendicular to the laser polarization, even in initially polycrystalline films. The reorientation is reversible, allowing for rewritable and spatially selective control of the <i>c</i>-axis orientation postdeposition. This light-driven approach opens a pathway for reconfigurable optoelectronic and photonic devices, such as active metasurfaces and CMOS-compatible architectures.
Authors
- Jun Uzuhashi (ORCID: https://orcid.org/0000-0003-2023-8158)
- Tadakatsu Ohkubo (ORCID: https://orcid.org/0000-0003-3548-1951)
- Y. Kobayashi
- Makoto Shoshin
- H Kondo
- Masamitsu Hayashi
- Masashi Kawaguchi
- Arata Mitsuzuka
Institutions
- National Institute for Materials Science (JP)
- Quantum Technologies (Sweden) (SE)
- The University of Tokyo (JP)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-12-23
- DOI
- https://doi.org/10.1021/acs.nanolett.5c04774
- Primary Topic
- Metamaterials and Metasurfaces Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00