Overview of Medium Voltage SiC Power Module Packaging Technologies: Layout, Insulation, and Cooling Structure

As materials and fabrication processes advance, the medium voltage (MV) silicon carbide (SiC) power semiconductors featuring exceptional electrothermal properties are emerging in high-power applications. Packaging technology, as the key bridge linking MV SiC power semiconductors to external systems, plays a vital role in fully harnessing their performance benefits. In this paper, a comprehensive overview of packaging technologies for MV SiC power modules is provided, focusing on critical aspects of package layout, parasitics, partial discharge, and cooling structure. Through the review, emerging challenges facing MV SiC packaging are detailed and salient distinctions from low voltage SiC packaging are highlighted. In addition, potential solutions are discussed, and insights into future technological trends are shared.