Intertwined Electron–Electron Interactions and Disorder in the Metal–Insulator Phase Transition

Quantum materials exhibit a rich dynamic of physical parameters, which, when combined, can lead to entirely different behaviors. These parameters constantly compete with each other, with the most influential parameters determining the state of the system. For example, in the case of metal–insulator transitions, electron–electron interactions compete with the kinetic energy of the electrons and disorder. Understanding these complex dynamics is crucial for both fundamental physics and the development of novel technological applications, particularly given the role of disorder in tuning critical temperatures, a property with significant potential benefit in the fabrication of new devices where temperature requirements are still the bottleneck. In this article, properties of the Mott metal–insulator transition within disordered electron systems are explored using the disordered Hubbard model, the simplest Hamiltonian for capturing the metal–insulator transition. The model solutions are obtained using the self-consistent statistical dynamical mean-field theory (statDMFT). statDMFT incorporates local electronic correlation effects while allowing for Anderson localization due to disorder.