Opto-Electronic Spiking Neuron Using Integrated Photodetector and Resonant Tunnelling Diode
We present a study of coupling an InP-based photonic integrated photodetector to a resonant tunnelling diode (RTD) for generating optically-triggered electronic spikes. Individual device characterisation of the joint opto-electronic spiking neuron highlights a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.09 \mathrm{A} / \mathrm{W}$</tex> photodetector responsivity and versatile RTD excitability with a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{1 4. 5 n s}$</tex> refractory period.
Authors
- K.A. Williams
- V. Dolores-Calzadilla
- E. Malysheva
- D.A. Harmsen
Institutions
- Eindhoven University of Technology (NL)
Publication Details
- Published
- 2025-11-09
- DOI
- https://doi.org/10.1109/ipc65510.2025.11282386
- Primary Topic
- Neural Networks and Reservoir Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00