Self-biased visible-NIR photodetection enabled <i>via</i> a dual-heterojunction n-MoS <sub>2</sub> /p-CuO/n-Si design

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Journal
Materials Advances
Published
2025-12-22
DOI
https://doi.org/10.1039/d5ma01150g
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
0.00

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article

Self-biased visible-NIR photodetection enabled via a dual-heterojunction n-MoS 2 /p-CuO/n-Si design

ASMIET RAMIZY, Tabark A. Fayad, Ethar Yahya Salih, Mohamed Hassan Eisa
Materials Advances
Semiconductor materials and interfaces
article

Self-biased visible-NIR photodetection enabled via a dual-heterojunction n-MoS 2 /p-CuO/n-Si design

ASMIET RAMIZY, Tabark A. Fayad, Ethar Yahya Salih, Mohamed Hassan Eisa
article en

Abstract

No abstract available for this paper.
Materials AdvancesVol. 7(2)
Imam Mohammad ibn Saud Islamic University (SA), University of Anbar (IQ)
Al-Imam Muhammad Ibn Saud Islamic University
Openalex Percentile: Top 33%
Semiconductor materials and interfaces
DOIOpen Access PDFOpenAlex
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