InAs/InAlGaAs Quantum Dash Regrowth on InP/SOI Stripes Emitting at Telecom Band

This work demonstrated InAs/InGaAs/InAlGaAs dash-in-well active structures selectively regrown on patterned nInP/SOI stripes. Regrown InAs quantum dashes feature high crystalline quality, uniform stacking, and strong photoluminescence at the telecom band.

Authors

Ying Xue
XiangQuan Liu
Jiahe Liu
Jie Li
Kei May Lau

Institutions

Hong Kong University of Science and Technology (HK)
University of Hong Kong (HK)

Publication Details

Published: 2025-11-09
DOI: https://doi.org/10.1109/ipc65510.2025.11282249
Primary Topic: Semiconductor Quantum Structures and Devices
Type: article
Field-Weighted Citation Impact: 0.00

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article

InAs/InAlGaAs Quantum Dash Regrowth on InP/SOI Stripes Emitting at Telecom Band

Ying Xue, XiangQuan Liu, Jiahe Liu, Jie Li et al.

Nov 9, 2025

Semiconductor Quantum Structures and Devices

article

InAs/InAlGaAs Quantum Dash Regrowth on InP/SOI Stripes Emitting at Telecom Band

Ying Xue, XiangQuan Liu, Jiahe Liu, Jie Li, Kei May Lau

November 9, 2025article en

Abstract

Hong Kong University of Science and Technology (HK), University of Hong Kong (HK)

Openalex Percentile: Top 33%

Semiconductor Quantum Structures and Devices

DOI Source OpenAlex

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InAs/InAlGaAs Quantum Dash Regrowth on InP/SOI Stripes Emitting at Telecom Band — Ying Xue, XiangQuan Liu, et al. · (2025) | TGRS Research Map | TGRS