Electron-rich sulfur sites and dual interfacial bonds in S-scheme heterojunction enable high quantum yield and stable hydrogen production

The intrinsic strong bonding between sulfur sites and adsorbed hydrogen atoms (S-H ads ) in ZnIn 2 S 4 (ZIS) presents a formidable kinetic bottleneck for H 2 desorption. Additionally, low electron mobility and high recombination of charge carrier synergistically limit its photocatalytic H 2 production efficiency. Here, we engineer sulfur vacancies (Sv) to introduce localized defect states near the Fermi level weakens S-H ads bonds by populating S-H antibonding orbitals and shifting the S 3p center, thus overcoming the H 2 desorption barrier. The rapid electron recombination and low electron in Sv-ZIS have been overcome by integrating it with α-MnO 2 into S-scheme heterojunction. The Density-Functional Theory calculations and experimental reveal that interfacial dual bonds of Mn S and Mn In simultaneously lower electron-transfer barriers and stabilize the catalyst structure. The femtosecond transient absorption spectroscopy has demonstrated a ≈ 6-fold enhanced electron lifetime and a drastic reduction in electron recombination. These result in a ≈ 33 times greater H 2 evolution (16.35 mmol g −1 h −1 ) compared with pristine-ZIS having quantum efficiency of 78 % at 420 nm and a long-term stability endorse by only <1 % decay over 6 months. This article therefore marks a step forward advancement in addressing the longstanding chemical and electronic kinetic challenges in ZIS, and may guide developing highly efficient photocatalysts. • An S-scheme heterojunction with dual Mn-S/Mn-In interfacial bonds is constructed, which drastically reduces charge-transfer barriers and stabilizes the catalyst structure, enabling ultrafast electron separation. • Sulfur vacancies create electron-rich S δ- sites that weaken the S-H ads bond by populating its antibonding orbital, effectively overcoming the hydrogen desorption barrier and preventing active site poisoning. • The optimized photocatalyst achieves an exceptional H 2 evolution rate of 16.35 mmol g -1 h -1 and a record-high apparent quantum efficiency of 78% at 420 nm , representing a 33-fold enhancement over pristine ZnIn 2 S 4 . • The catalyst demonstrates outstanding long-term stability , retaining over 96% of its initial activity after 25 hours of cycling and showing less than 1% performance decay after 6 months of ambient storage.

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Publication Details

Journal
Chemical Engineering Journal
Published
2025-12-21
DOI
https://doi.org/10.1016/j.cej.2025.172029
Citations
2
Primary Topic
Advanced Photocatalysis Techniques
Type
article
Field-Weighted Citation Impact
0.73
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article

Electron-rich sulfur sites and dual interfacial bonds in S-scheme heterojunction enable high quantum yield and stable hydrogen production

Fazal Raziq, Mohammad Ziaur Rahman, Shulong Li, Sajjad Ali et al.
2 citations
Chemical Engineering Journal
Advanced Photocatalysis Techniques
0.73
article

Electron-rich sulfur sites and dual interfacial bonds in S-scheme heterojunction enable high quantum yield and stable hydrogen production

Fazal Raziq, Mohammad Ziaur Rahman, Shulong Li, Sajjad Ali, Syed Ul Hasnain Bakhtiar, Sher Ali, Sharafat Ali, Ahmed Ismail, Muhammad Azzam Ismail, Liang Qiao
article en
2 citations

Abstract

The intrinsic strong bonding between sulfur sites and adsorbed hydrogen atoms (S-H ads ) in ZnIn 2 S 4 (ZIS) presents a formidable kinetic bottleneck for H 2 desorption. Additionally, low electron mobility and high recombination of charge carrier synergistically limit its photocatalytic H 2 production efficiency. Here, we engineer sulfur vacancies (Sv) to introduce localized defect states near the Fermi level weakens S-H ads bonds by populating S-H antibonding orbitals and shifting the S 3p center, thus overcoming the H 2 desorption barrier. The rapid electron recombination and low electron in Sv-ZIS have been overcome by integrating it with α-MnO 2 into S-scheme heterojunction. The Density-Functional Theory calculations and experimental reveal that interfacial dual bonds of Mn S and Mn In simultaneously lower electron-transfer barriers and stabilize the catalyst structure. The femtosecond transient absorption spectroscopy has demonstrated a ≈ 6-fold enhanced electron lifetime and a drastic reduction in electron recombination. These result in a ≈ 33 times greater H 2 evolution (16.35 mmol g −1 h −1 ) compared with pristine-ZIS having quantum efficiency of 78 % at 420 nm and a long-term stability endorse by only <1 % decay over 6 months. This article therefore marks a step forward advancement in addressing the longstanding chemical and electronic kinetic challenges in ZIS, and may guide developing highly efficient photocatalysts. • An S-scheme heterojunction with dual Mn-S/Mn-In interfacial bonds is constructed, which drastically reduces charge-transfer barriers and stabilizes the catalyst structure, enabling ultrafast electron separation. • Sulfur vacancies create electron-rich S δ- sites that weaken the S-H ads bond by populating its antibonding orbital, effectively overcoming the hydrogen desorption barrier and preventing active site poisoning. • The optimized photocatalyst achieves an exceptional H 2 evolution rate of 16.35 mmol g -1 h -1 and a record-high apparent quantum efficiency of 78% at 420 nm , representing a 33-fold enhancement over pristine ZnIn 2 S 4 . • The catalyst demonstrates outstanding long-term stability , retaining over 96% of its initial activity after 25 hours of cycling and showing less than 1% performance decay after 6 months of ambient storage.

Chemical Engineering JournalVol. 528
King Fahd University of Petroleum and Minerals (SA), Prince Sultan University (SA), University of Electronic Science and Technology of China (CN), Chengdu University (CN), Chuxiong Normal University (CN)
Openalex Percentile: Top 26%
Advanced Photocatalysis Techniques
0.73
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