Design of extend continuous Class-B/J mode broadband and high efficiency power amplifier with a novel E-shaped resonator filter

In this letter, we propose a method to design wideband high-efficiency power amplifiers (PAs) based on extended continuous Class-B/J (ECCB/J) modes with a new low-pass filter (LPF). This LPF consists of many E-shaped resonators. Its capability to control harmonic impedance matching allows for improvements in both efficiency and bandwidth. And it can also contribute to a broadband impedance matching in the predefined optimal impedance region with the combination of ECCB/J modes. To verify the proposed methodology, we designed and fabricated a wideband high-efficiency PA using a commercial 10-W GaN device. The measured results show that in the target frequency band from 0.5 to 3.0 GHz, a drain efficiency (DE) of 58.5%-78.5% and a gain of 9.6-12.2dB can be obtained and a saturated output power of 39.6-42.2 dBm when the input power is 30dBm.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-12-21
DOI
https://doi.org/10.1587/elex.22.20250706
Primary Topic
Advanced Power Amplifier Design
Type
article
Field-Weighted Citation Impact
0.00

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article

Design of extend continuous Class-B/J mode broadband and high efficiency power amplifier with a novel E-shaped resonator filter

Minshi Jia, Ziru Zhou, Tiansong Deng, Yaxing Liu
IEICE Electronics Express
Advanced Power Amplifier Design
article

Design of extend continuous Class-B/J mode broadband and high efficiency power amplifier with a novel E-shaped resonator filter

Minshi Jia, Ziru Zhou, Tiansong Deng, Yaxing Liu
article en

Abstract

In this letter, we propose a method to design wideband high-efficiency power amplifiers (PAs) based on extended continuous Class-B/J (ECCB/J) modes with a new low-pass filter (LPF). This LPF consists of many E-shaped resonators. Its capability to control harmonic impedance matching allows for improvements in both efficiency and bandwidth. And it can also contribute to a broadband impedance matching in the predefined optimal impedance region with the combination of ECCB/J modes. To verify the proposed methodology, we designed and fabricated a wideband high-efficiency PA using a commercial 10-W GaN device. The measured results show that in the target frequency band from 0.5 to 3.0 GHz, a drain efficiency (DE) of 58.5%-78.5% and a gain of 9.6-12.2dB can be obtained and a saturated output power of 39.6-42.2 dBm when the input power is 30dBm.

IEICE Electronics ExpressVol. 23(3)
Hangzhou Dianzi University (CN)
Hangzhou Dianzi University
Affordable and clean energy
Openalex Percentile: Top 43%
Advanced Power Amplifier Design
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