Memory Architectures for Robust IoT-Based Applications: A Comprehensive Study of 6T SRAM with Emphasis on Read-Write Operations, Stability, and Radiation Hardening

As the Internet of Things (IoT) ecosystem grows, so does the demand for efficient and dependable memory solutions targeted to the unique difficulties of IoT-based applications. The demand for reliable and energy-efficient Static random-access memory (SRAM) has risen due to the increasing number of Internet of Things (IoT) devices and the increase in semiconductor technology. Because of its simplicity, low standby power consumption, and ease of integration, the 6T SRAM cell is a good choice for Internet of Things applications. The 6-transistor (6T) SRAM cell has become popular because of its simplicity and adaptability. The study looks on the resistance of memory systems, namely the 6T SRAM cell, against radiation-induced errors. It is critical to understand how ionising radiation affects memory integrity in Internet of Things scenarios where devices may be exposed to radiation-rich environments. This paper presents a comprehensive study and simulation of the 6T SRAM cell for the use IoT applications, on cadence virtuoso tool with GPDK 45nm technology node focusing on its read-write operations, stability, and radiation-hardening properties.