L-Band widely tunable laser and high gain semiconductor optical amplifier based on heterogeneous integration of III-V on silicon

L-Band on-chip heterogeneous integration lasers and semiconductor optical amplifiers (SOA) are important silicon photonics components in many applications such as light detection and ranging (LiDAR) and optical communications in data center interconnects. In this work, we demonstrate an L-band widely tunable laser and a high gain SOA on a III-V/Si integration platform. The laser gives a tuning range of 43 nm with side-mode suppression ratio > 45 dB, and output power of 9.15 mW, while the SOA shows a small-signal gain of 21 dB and a saturation output power of 13 dBm. The SOA and laser share the same III-V epitaxial wafer structure and a common fabrication process, which benefits the high-density components integration and reduces costs greatly in many applications.