Sb-Based Lasers Epitaxially Grown on Si(001) for Mid-Infrared Applications
The direct integration of Sb-based lasers onto silicon substrates will support the development of integrated optical sensor for mid-IR applications. We have achieved high performance quantum well lasers (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2-3 \mu \mathrm{m}$</tex>), interband cascade lasers (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$3-5 \mu \mathrm{m}$</tex>) and qantum cascade lasers (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$>5 \mu \mathrm{m}$</tex>).
Authors
- Andres Remis (ORCID: https://orcid.org/0000-0001-8590-6634)
- E. Tournié (ORCID: https://orcid.org/0000-0002-8177-0810)
- A.N. Baranov
- Maëva Fagot
- R. Teissier
- Y. Rouillard
- J.B. Rodriguez
- Z. Loghmari
- M. Paparella
- D. A. Díaz-Thomas
- L. Cerutti
- A. Gilbert
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Montpellier (FR)
- Misasa Onsen Hospital (JP)
Publication Details
- Published
- 2025-11-09
- DOI
- https://doi.org/10.1109/ipc65510.2025.11282355
- Primary Topic
- Spectroscopy and Laser Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00