Comparative thickness dependent structural, dielectric and ferroelectric property study of PLD deposited ZrO2 thin films

This study investigates the structural and ferroelectric properties of ZrO 2 thin films (∼10 nm, 20 nm, and 40 nm) deposited via Pulsed Laser Deposition (PLD). Structural analysis reveals the presence of tetragonal/orthorhombic phases and significant out-of-plane compressive strain at lower thicknesses. Increasing film thickness enhances crystallinity and causes XRD peak shifts towards standard positions, indicating reduced strain. Ferroelectric measurements show that remnant polarisation ( P r ) and coercive field ( V c ) decrease, while saturation polarisation ( P s ) increases with thickness. This behavior is attributed to strain relaxation and the emergence of the monoclinic phase in films thicker than 20 nm. The 20 nm ZrO 2 film demonstrates an optimal balance of ferroelectric phase fraction and memory window performance, making it superior to the 10 nm and 40 nm films. • ZrO 2 thin films (∼10, 20, 40 nm) deposited via Pulse Laser Deposition (PLD). • Tetragonal/orthorhombic phases observed with significant out-of-plane compressive strain at lower thickness. • Increased film thickness improves crystallinity and reduces out-of-plane compressive strain. • Reduced P r and V c in 40 nm film linked to strain relaxation and monoclinic phase formation.