Comparative analysis of SEGR and SEB susceptibility in Si and SiC MOSFETs using TCAD modeling

Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-09-29
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

Comparative analysis of SEGR and SEB susceptibility in Si and SiC MOSFETs using TCAD modeling

SPIRE - Sciences Po Institutional REpository
Silicon Carbide Semiconductor Technologies
article

Comparative analysis of SEGR and SEB susceptibility in Si and SiC MOSFETs using TCAD modeling

article en

Abstract

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SPIRE - Sciences Po Institutional REpository
Openalex Percentile: Top 43%
Silicon Carbide Semiconductor Technologies
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Comparative analysis of SEGR and SEB susceptibility in Si and SiC MOSFETs using TCAD modeling · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS