Spintronics technology: A comprehensive review of materials, applications, and future trends

Utilizing the combination of electron spin and the electric field, spintronic technology has become a revolutionary way to overcome the drawbacks of traditional charge-based electronics, such as power inefficiency and performance saturation. This paper reviews recent breakthroughs in spintronics, which have achieved ultrafast switching speeds and ultra-low energy consumption in magnetic tunnel junctions. By integrating advanced materials, such as topological insulators, two-dimensional ferromagnets, and heavy metals, we found the room-temperature stabilization of skyrmions with storage densities exceeding 1Tb/in 2 , enabling high-density nonvolatile memory. Furthermore, a hybrid complementary metal-oxide semiconductor-spintronic architecture is discussed, which reduces power consumption by 30% in neuromorphic computing applications while maintaining compatibility with existing semiconductor technologies. Key innovations, such as optimized cobalt-iron-boron/magnesium oxide interfaces for tunneling magnetoresistance ratios exceeding 300 %, efficient spin-charge conversion in heavy metals, and voltage-controlled skyrmion devices for sub-0.1 pJ/bit operation, are also discussed. These advancements address scalability, thermal stability, and fabrication challenges, positioning spintronics as a cornerstone for next-generation memory, logic devices, and quantum computing. We also found that spintronic neuromorphic systems can achieve 20 TOP/s/w , outperforming traditional artificial intelligence accelerators. At the same time, spin qubits with 99.9 % fidelity offer a scalable pathway to quantum computing, underscoring spintronics' potential to revolutionize artificial intelligence, the Internet of Things, and quantum technologies, providing energy-efficient, high-performance solutions for the post-Moore era. Future efforts will focus on three-dimensional magnetic tunnel junction stacking with densities exceeding 1Tb/mm 3 , and defect-tolerant materials for large-scale commercialization.

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Publication Details

Journal
Journal of Science Advanced Materials and Devices
Published
2025-12-19
DOI
https://doi.org/10.1016/j.jsamd.2025.101087
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
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article

Spintronics technology: A comprehensive review of materials, applications, and future trends

Journal of Science Advanced Materials and Devices
Magnetic properties of thin films
article

Spintronics technology: A comprehensive review of materials, applications, and future trends

article en

Abstract

Utilizing the combination of electron spin and the electric field, spintronic technology has become a revolutionary way to overcome the drawbacks of traditional charge-based electronics, such as power inefficiency and performance saturation. This paper reviews recent breakthroughs in spintronics, which have achieved ultrafast switching speeds and ultra-low energy consumption in magnetic tunnel junctions. By integrating advanced materials, such as topological insulators, two-dimensional ferromagnets, and heavy metals, we found the room-temperature stabilization of skyrmions with storage densities exceeding 1Tb/in 2 , enabling high-density nonvolatile memory. Furthermore, a hybrid complementary metal-oxide semiconductor-spintronic architecture is discussed, which reduces power consumption by 30% in neuromorphic computing applications while maintaining compatibility with existing semiconductor technologies. Key innovations, such as optimized cobalt-iron-boron/magnesium oxide interfaces for tunneling magnetoresistance ratios exceeding 300 %, efficient spin-charge conversion in heavy metals, and voltage-controlled skyrmion devices for sub-0.1 pJ/bit operation, are also discussed. These advancements address scalability, thermal stability, and fabrication challenges, positioning spintronics as a cornerstone for next-generation memory, logic devices, and quantum computing. We also found that spintronic neuromorphic systems can achieve 20 TOP/s/w , outperforming traditional artificial intelligence accelerators. At the same time, spin qubits with 99.9 % fidelity offer a scalable pathway to quantum computing, underscoring spintronics' potential to revolutionize artificial intelligence, the Internet of Things, and quantum technologies, providing energy-efficient, high-performance solutions for the post-Moore era. Future efforts will focus on three-dimensional magnetic tunnel junction stacking with densities exceeding 1Tb/mm 3 , and defect-tolerant materials for large-scale commercialization.

Journal of Science Advanced Materials and DevicesVol. 11(1)
China West Normal University (CN)
Affordable and clean energy
Openalex Percentile: Top 34%
Magnetic properties of thin films
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Spintronics technology: A comprehensive review of materials, applications, and future trends · Journal of Science Advanced Materials and Devices (2025) | TGRS Research Map | TGRS