High-Efficiency, High-Power Designs for ~10 μm-Emitting Quantum Cascade Lasers

By employing graded-interfaces modeling, ~10 μm-emitting quantum cascade lasers (QCLs) are designed with previously found conditions for record-high wall-plug efficiency (WPE) operation of mid-infrared QCLs: direct resonant-tunneling injection from a prior-stage low-energy state into the upper-laser level, photon-induced carrier transport, and carrier-leakage suppression via the step-taper active-region (STA) approach. For devices with interface-roughness (IFR) parameters characteristic of optimized molecular-beam-epitaxy (MBE) growth, a maximum front-facet pulsed WPE value of 19.6% is projected for 60-stages STA-type devices. This results from several factors: 19 mV voltage defect at threshold, 72% voltage efficiency at the maximum WPE point, and ~93% injection efficiency due to strong carrier-leakage suppression. 2.7 W peak front-facet power is projected. For devices with our metal–organic chemical vapor deposition (MOCVD)-growth IFR parameters, the projected maximum pulsed WPE value is 17.1%, i.e., 1.7 times higher than the highest reported front-facet WPE value from ~10 μm-emitting MOCVD-grown QCLs. Studies regarding the WPE value variation with the stage number, while employing waveguide designs having the same empty cavity loss, reveal that the maximum WPE value remains almost the same for 50–60 stages devices. In turn, there is potential for obtaining significantly higher CW powers than from conventional ~10 μm-emitting QCLs.