Ultrathin sub-5 nm gate-all-around SiGe nanowire transistors with near-ideal subthreshold swing

This paper demonstrates the International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) achieved at 3–5 nm gate lengths.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-12-18
DOI
https://doi.org/10.1039/d5tc03710g
Citations
1
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.73
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article

Ultrathin sub-5 nm gate-all-around SiGe nanowire transistors with near-ideal subthreshold swing

1 citations
Journal of Materials Chemistry C
Advancements in Semiconductor Devices and Circuit Design
0.73
article

Ultrathin sub-5 nm gate-all-around SiGe nanowire transistors with near-ideal subthreshold swing

article en
1 citations

Abstract

This paper demonstrates the International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) achieved at 3–5 nm gate lengths.

Journal of Materials Chemistry CVol. 14(7)
Singapore University of Technology and Design (SG), Peking University (CN), Northwest University (CN)
Industry, innovation and infrastructure
Openalex Percentile: Top 20%
Advancements in Semiconductor Devices and Circuit Design
0.73
DOISourceOpenAlex
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Ultrathin sub-5 nm gate-all-around SiGe nanowire transistors with near-ideal subthreshold swing · Journal of Materials Chemistry C (2025) | TGRS Research Map | TGRS