An Artificial Synaptic Device Based on InSe/Charge Trapping Layer/h-BN Heterojunction with Controllable Charge Trapping via Oxygen Plasma Treatment

Neuromorphic computing, an emerging computational paradigm, aims to overcome the bottlenecks of the traditional von Neumann architecture. Two-dimensional materials serve as ideal platforms for constructing artificial synaptic devices, yet existing devices based on these materials face challenges such as insufficient stability. Indium selenide (InSe), a two-dimensional semiconductor with unique properties, demonstrates significant potential in the field of neuromorphic devices, though its application research remains in the initial stage. This study presents an artificial synaptic device based on the InSe/Charge Trapping Layer (CTL)/h-BN heterojunction. By applying oxygen plasma treatment to h-BN to form a controllable charge-trapping layer, efficient regulation of carriers in the InSe channel is achieved. The device successfully emulates fundamental synaptic behaviors including paired-pulse facilitation and long-term potentiation/inhibition, exhibiting excellent reproducibility and stability. Through investigating the influence of electrical pulse parameters on synaptic weights, a structure-activity relationship between device performance and structural parameters is established. Experimental results show that the device features outstanding linearity and symmetry, realizing the simulation of key synaptic behaviors such as dynamic conversion between short-term and long-term plasticity. It possesses a high dynamic range ratio of 7.12 and robust multi-level conductance tuning capability, with stability verified through 64 pulse cycle tests. This research provides experimental evidence for understanding interfacial charge storage mechanisms, paves the way for developing high-performance neuromorphic computing devices, and holds broad application prospects in brain-inspired computing and artificial intelligence hardware.