Experimental Evaluation of EMI and Efficiency in a Hybrid T-Type Wide-Bandgap Converter
This work presents an experimental study of a hybrid T-type converter using wide-bandgap (WBG) devices, combining the low switching losses of gallium nitride (GaN) with the high-voltage capability of silicon carbide (SiC). Furthermore, an adaptive level-shift algorithm is introduced, enabling operation in both two- and three-level modes, improving fault tolerance and current capability. Experimental validation demonstrates high efficiency, minimal EMI impact at high switching frequencies, and improved THD, confirming the converter as a robust solution for high-performance applications.
Institutions
- Universitat Politècnica de Catalunya (ES)
Publication Details
- Journal
- Zenodo (CERN European Organization for Nuclear Research)
- Published
- 2025-12-17
- DOI
- https://doi.org/10.5281/zenodo.17963133
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00