Ultra-Wideband Quad-Parallel Shunt-Diode Rectifier for Sub-6 GHz Wireless Power Transfer

Wireless power transfer via RF/microwave rectifiers has emerged as a sustainable solution to the energy requirements of low-power devices. In this study, a novel four-parallel-shunt-diode ultra-wideband rectifier is proposed to enable wireless power transfer in the sub-6-GHz 5G bands. The proposed circuit maintains a power conversion efficiency (PCE) above 50% across the 1.6-5.1 GHz frequency range at 10 dBm input power and also achieves an efficiency above 50% at 3 GHz for input powers between 1 dBm and 16 dBm. Designed and fabricated on a low-cost FR4 substrate, the rectifier achieves a maximum power conversion efficiency of 76% at 2.9 GHz with a 10 dBm input power. Furthermore, a wideband impedance analysis is performed, taking into account the packaging parasitics of the HSMS-2860 diodes used in the study. Despite the use of a lossy substrate such as FR4, the proposed four-parallel-shunt-diode topology improves impedance stability and provides impedance matching over both a wide input-power range and a wide frequency band when compared with single- and double-diode structures reported in the literature.

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Publication Details

Journal
Micromachines
Published
2025-12-17
DOI
https://doi.org/10.3390/mi16121417
Primary Topic
Energy Harvesting in Wireless Networks
Type
article
Field-Weighted Citation Impact
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article

Ultra-Wideband Quad-Parallel Shunt-Diode Rectifier for Sub-6 GHz Wireless Power Transfer

Micromachines
Energy Harvesting in Wireless Networks
article

Ultra-Wideband Quad-Parallel Shunt-Diode Rectifier for Sub-6 GHz Wireless Power Transfer

article en

Abstract

Wireless power transfer via RF/microwave rectifiers has emerged as a sustainable solution to the energy requirements of low-power devices. In this study, a novel four-parallel-shunt-diode ultra-wideband rectifier is proposed to enable wireless power transfer in the sub-6-GHz 5G bands. The proposed circuit maintains a power conversion efficiency (PCE) above 50% across the 1.6-5.1 GHz frequency range at 10 dBm input power and also achieves an efficiency above 50% at 3 GHz for input powers between 1 dBm and 16 dBm. Designed and fabricated on a low-cost FR4 substrate, the rectifier achieves a maximum power conversion efficiency of 76% at 2.9 GHz with a 10 dBm input power. Furthermore, a wideband impedance analysis is performed, taking into account the packaging parasitics of the HSMS-2860 diodes used in the study. Despite the use of a lossy substrate such as FR4, the proposed four-parallel-shunt-diode topology improves impedance stability and provides impedance matching over both a wide input-power range and a wide frequency band when compared with single- and double-diode structures reported in the literature.

MicromachinesVol. 16(12)
Iğdır Üniversitesi (TR)
Openalex Percentile: Top 44%
Energy Harvesting in Wireless Networks
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