Study on Total Ionizing Dose Effect of FinFETs in Low-Temperature Environments

This paper focuses on FinFET transistors. The degradation characteristics of FinFET devices after total ionizing dose (TID) radiation in low-temperature environments were investigated by means of a combination of experiments and TCAD simulations. By analyzing the electronic properties of radiation-induced defects in FinFET transistors under low-temperature conditions, the formation and evolution mechanisms of these defects are studied. A physical model for the low-temperature total dose effects of FinFET transistors is established, providing support for the radiation hardening and space applications of FinFET devices.