Ultra-broadband polarization-insensitive dual-mode silicon waveguide crossing enabled by subwavelength grating-array-assisted multimode engineering

We demonstrate an ultra-broadband polarization-insensitive dual-mode silicon waveguide crossing enabled by subwavelength grating (SWG) array-assisted multimode engineering. The device incorporates multi-row nano-hole SWG arrays within the multimode interference region and fan-shaped bent SWGs between crossings to align modal phases and suppress crosstalk (CT). At 1550 nm, the crossing exhibits simulated insertion losses (ILs) of 0.09-0.46 dB and CT below -24 dB for the TE<sub>0</sub>, TM<sub>0</sub>, TE<sub>1</sub>, and TM<sub>1</sub> modes. Over the 1260-1675 nm range, all modes maintain ILs below 1 dB and CT below -22 dB. Fabricated on a 220 nm SOI platform, the devices show consistent performance experimentally, with ILs below 1 dB and CT below -20 dB from 1300 to 1650 nm. The proposed structure offers record bandwidth and full dual-polarization support for high-capacity multimode photonic integration.

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Publication Details

Journal
Optics Letters
Published
2025-12-17
DOI
https://doi.org/10.1364/ol.581336
Primary Topic
Photonic and Optical Devices
Type
article
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article

Ultra-broadband polarization-insensitive dual-mode silicon waveguide crossing enabled by subwavelength grating-array-assisted multimode engineering

Optics Letters
Photonic and Optical Devices
article

Ultra-broadband polarization-insensitive dual-mode silicon waveguide crossing enabled by subwavelength grating-array-assisted multimode engineering

article en

Abstract

We demonstrate an ultra-broadband polarization-insensitive dual-mode silicon waveguide crossing enabled by subwavelength grating (SWG) array-assisted multimode engineering. The device incorporates multi-row nano-hole SWG arrays within the multimode interference region and fan-shaped bent SWGs between crossings to align modal phases and suppress crosstalk (CT). At 1550 nm, the crossing exhibits simulated insertion losses (ILs) of 0.09-0.46 dB and CT below -24 dB for the TE<sub>0</sub>, TM<sub>0</sub>, TE<sub>1</sub>, and TM<sub>1</sub> modes. Over the 1260-1675 nm range, all modes maintain ILs below 1 dB and CT below -22 dB. Fabricated on a 220 nm SOI platform, the devices show consistent performance experimentally, with ILs below 1 dB and CT below -20 dB from 1300 to 1650 nm. The proposed structure offers record bandwidth and full dual-polarization support for high-capacity multimode photonic integration.

Optics LettersVol. 51(2)
Hebei University (CN), Fuzhou University (CN)
Affordable and clean energy
Openalex Percentile: Top 44%
Photonic and Optical Devices
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Ultra-broadband polarization-insensitive dual-mode silicon waveguide crossing enabled by subwavelength grating-array-assisted multimode engineering · Optics Letters (2025) | TGRS Research Map | TGRS