Erratum to: Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

Institutions

Publication Details

Journal
Russian Electrical Engineering
Published
2025-10-01
DOI
https://doi.org/10.3103/s1068371225100013
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Erratum to: Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

Russian Electrical Engineering
Silicon Carbide Semiconductor Technologies
article

Erratum to: Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

article en

Abstract

No abstract available for this paper.
Russian Electrical EngineeringVol. 96(10)
Stavropol State Agrarian University (RU), North-Caucasus Federal University (RU), Don State Technical University (RU)
Affordable and clean energy
Openalex Percentile: Top 44%
Silicon Carbide Semiconductor Technologies
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Erratum to: Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads · Russian Electrical Engineering (2025) | TGRS Research Map | TGRS