Synchrotron X-ray topography investigation on dislocation propagation in heavily arsenic-doped silicon crystal necks

Publication Details

Journal
Journal of Crystal Growth
Published
2025-12-13
DOI
https://doi.org/10.1016/j.jcrysgro.2025.128459
Primary Topic
Advanced Electron Microscopy Techniques and Applications
Type
article
Field-Weighted Citation Impact
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article

Synchrotron X-ray topography investigation on dislocation propagation in heavily arsenic-doped silicon crystal necks

Journal of Crystal Growth
Advanced Electron Microscopy Techniques and Applications
article

Synchrotron X-ray topography investigation on dislocation propagation in heavily arsenic-doped silicon crystal necks

article en

Abstract

No abstract available for this paper.
Journal of Crystal GrowthVol. 677
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Advanced Electron Microscopy Techniques and Applications
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