Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing

Dual-gate multi-bit memory transistors that combine charge-trap and ferroelectric effects are demonstrated as a synaptic memory with high dynamic range.

Institutions

Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-12-12
DOI
https://doi.org/10.1039/d5tc03771a
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00
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article

Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing

Journal of Materials Chemistry C
Ferroelectric and Negative Capacitance Devices
article

Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing

article en

Abstract

Dual-gate multi-bit memory transistors that combine charge-trap and ferroelectric effects are demonstrated as a synaptic memory with high dynamic range.

Journal of Materials Chemistry CVol. 14(8)
University of Seoul (KR), Hanbat National University (KR)
Affordable and clean energy
Openalex Percentile: Top 44%
Ferroelectric and Negative Capacitance Devices
DOISourceOpenAlex
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Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing · Journal of Materials Chemistry C (2025) | TGRS Research Map | TGRS