Integrated Short-Circuit Protection Method in On-State Voltage Measurement Circuit for SiC MOSFETs

This paper presents an integrated approach for condition monitoring (CM) and short-circuit (SC) protection in SiC MOSFETs. This design integrates CM and SC protection functionalities within a single circuit by employing an improved on-state voltage measurement circuit, thereby enhancing system compactness. The on-state voltage measurement circuit is specifically configured to interface with the desaturation (DESAT) pin of standard gate driver ICs, which enables effective SC fault protection without significantly increasing circuit complexity or component count. By leveraging shared components, this integrated method simplifies the circuit architecture, reduces space requirements, and mitigates the noise interference or measurement error issues common in traditional integration methods. Simulation and experimental results demonstrate that the proposed method achieves accurate on-state voltage measurements and reliable short-circuit protection under various operating conditions. Therefore, this integrated method has the potential to improve the safety and durability of power electronic systems, particularly in high-frequency SiC MOSFET applications.