Photonic Crystal Surface Emitting Lasers (PCSELs) based on Dot in Well (DWELL) Active Region by Epitaxial Regrowth Method

In this study, we explore photonic crystal surface emitting laser (PCSEL) for vertical emission with high beam quality, high room temperature continuous wave output power, compactness, and electrical injection, with less fabrication complexity. The fabrication process involves epitaxial regrowth, where photonic crystals are patterned via electron beam lithography and etched using inductively coupled plasma. We employ dot-in-well (DWELL) active regions, known for superior thermal stability, to mitigate quantum dot (QD) degradation during high-temperature regrowth. Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) are explored as a regrowth phase. MOCVD regrowth yielded better crystal quality than MBE. We successfully demonstrate an optically pumped epitaxially regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.

Publication Details

Journal
UNM’s Digital Repository (University of New Mexico)
Published
2025-04-15
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

Photonic Crystal Surface Emitting Lasers (PCSELs) based on Dot in Well (DWELL) Active Region by Epitaxial Regrowth Method

UNM’s Digital Repository (University of New Mexico)
Semiconductor Lasers and Optical Devices
article

Photonic Crystal Surface Emitting Lasers (PCSELs) based on Dot in Well (DWELL) Active Region by Epitaxial Regrowth Method

article en

Abstract

In this study, we explore photonic crystal surface emitting laser (PCSEL) for vertical emission with high beam quality, high room temperature continuous wave output power, compactness, and electrical injection, with less fabrication complexity. The fabrication process involves epitaxial regrowth, where photonic crystals are patterned via electron beam lithography and etched using inductively coupled plasma. We employ dot-in-well (DWELL) active regions, known for superior thermal stability, to mitigate quantum dot (QD) degradation during high-temperature regrowth. Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) are explored as a regrowth phase. MOCVD regrowth yielded better crystal quality than MBE. We successfully demonstrate an optically pumped epitaxially regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.

UNM’s Digital Repository (University of New Mexico)
Openalex Percentile: Top 44%
Semiconductor Lasers and Optical Devices
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