Electronic properties of the selenium passivated GaP(111)B surface:Towards growth of large scale quasi-van der Waals 2D/3D heterostructure

Publication Details

Journal
LillOA (Université de Lille (University Of Lille))
Published
2025-07-11
Primary Topic
2D Materials and Applications
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article
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article

Electronic properties of the selenium passivated GaP(111)B surface:Towards growth of large scale quasi-van der Waals 2D/3D heterostructure

LillOA (Université de Lille (University Of Lille))
2D Materials and Applications
article

Electronic properties of the selenium passivated GaP(111)B surface:Towards growth of large scale quasi-van der Waals 2D/3D heterostructure

article en

Abstract

No abstract available for this paper.
LillOA (Université de Lille (University Of Lille))
Zero hunger
Openalex Percentile: Top 50%
2D Materials and Applications
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Electronic properties of the selenium passivated GaP(111)B surface:Towards growth of large scale quasi-van der Waals 2D/3D heterostructure · LillOA (Université de Lille (University Of Lille)) (2025) | TGRS Research Map | TGRS