Design and Characterization of Radiation-Hardened GaAs HBT-Based Optical Transceivers

Optical transceivers are desirable for their galvanic isolation and natural immunity to electromagnetic interference compared with direct electrical connections. This is true in normal operating environments as well as radiation environments. This work realizes and characterizes GaAs HBT-based optical transceivers across temperature and a range of radiation environments including high dose rate, total ionizing dose, neutron, and heavy ion. The transceiver designs are discussed and specific environmental design considerations are highlighted. Final results for each environment are provided and compared with existing transceivers.