Characterization of Electrical and Optical Properties of Europium Oxide

Oxide semiconductors with high optical transparency hold significant promise for a broad range of optical applications. Among them, europium oxide (Eu₂O₃ ) has garnered considerable attention for its potential in transistor devices, resistive random-access memory (RRAM), white light-emitting devices, and erasable optical storage systems. Additionally, Eu₂O₃ is employed in nanoscale applications, such as photoactive coatings and high-k dielectrics. Its advantageous dielectric properties and high transmittance make it particularly well-suited for capacitor fabrication. The material also exhibits resistive switching behavior and notable optical absorption, further enhancing its relevance for optoelectronic devices. In this study, Eu₂O₃ thin films were deposited using RF magnetron sputtering at a fixed power of 50 W under varying pressure conditions at room temperature. The films were subsequently annealed in oxygen and nitrogen at 100 – 200 °C. The films annealed in Nitrogen and Oxygen showed an increase in dielectric constant. For optical studies, films are deposited on a quartz substrate. The bandgap of the film is extracted using transmission studies in the UV-visible range. X-ray diffraction was used to investigate Europium Oxide crystallization behavior by annealing samples with oxygen and nitrogen at 600 and 750 °C temperatures.