Effects of Bias Power on EEPFs near the Substrate in Argon ICP Measured by a Langmuir Probe

Electron energy probability functions (EEPFs) were measured 12 mm above the substrate across the diameter of the argon ICP chamber using a single Langmuir probe under applied bias power. The EEPFs exhibited reduced low-energy components and enhanced high-energy tails under 12.5 MHz RF bias, evolving toward a one-temperature Maxwellian profile.

Publication Details

Journal
Tokyo Tech Research Repository (Tokyo Institute of Technology)
Published
2025-11-15
Primary Topic
Quantum and electron transport phenomena
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article
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article

Effects of Bias Power on EEPFs near the Substrate in Argon ICP Measured by a Langmuir Probe

Tokyo Tech Research Repository (Tokyo Institute of Technology)
Quantum and electron transport phenomena
article

Effects of Bias Power on EEPFs near the Substrate in Argon ICP Measured by a Langmuir Probe

article en

Abstract

Electron energy probability functions (EEPFs) were measured 12 mm above the substrate across the diameter of the argon ICP chamber using a single Langmuir probe under applied bias power. The EEPFs exhibited reduced low-energy components and enhanced high-energy tails under 12.5 MHz RF bias, evolving toward a one-temperature Maxwellian profile.

Tokyo Tech Research Repository (Tokyo Institute of Technology)
Affordable and clean energy
Openalex Percentile: Top 36%
Quantum and electron transport phenomena
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Effects of Bias Power on EEPFs near the Substrate in Argon ICP Measured by a Langmuir Probe · Tokyo Tech Research Repository (Tokyo Institute of Technology) (2025) | TGRS Research Map | TGRS