Multimodalna karakterizacija čistih in v naprave vgrajenih 2D materialov pod delovanjem kontinuirnega in pulznega rentgenskega sevanja

2D Materials (2DMs) such as Graphene (Gr) and Hexagonal Boron Nitride (HBN) exhibit unique electronic and structural properties making them highly attractive for applications in nanoelectronics and radiation-tolerant devices. Understanding their response to ionizing radiation is crucial for their integration in future high-radiation environments. Primarily, this master’s thesis was conducted within the ID10 research group at the European Synchrotron Radiation Facility (ESRF) and focuses on the effects of continuous X-ray (XR) irradiation on 2DM layers. Grazing Incidence Diffraction (GID) and X-Ray Reflectivity (XRR) measurements were performed to characterize the structural response of few-layer Gr and HBN deposited on Silicon (Si) and Silicon Oxide (SiO2) substrates. Additionally, within the ID09 research group pulsed XR irradiation experiments were conducted on Graphene Field Effect Transistors (GFETs), followed by electrical characterization to assess changes in device performance parameters such as charge neutrality point, hysteresis, and current response. The results of GID, XRR and electrical characterization reveal measurable effect of structural modifications induced by irradiation, as well as shifts in the electrical characteristics of GFETs, depending on irradiation conditions. These findings contribute to a better understanding of radiation-induced effects in 2D systems and inform the design of more robust devices for future applications in sensing, electronics, and radiation environments.