Controlling the phase transition dynamics of GeTe by Sn substitution for phase change memory, photodetection and neuromorphic devices

Sn-substituted GeTe enhances photodetectivity and memory performance. The transition temperature drops from ∼150 to ∼100 o C with high resistance contrast. Sn stabilizes the cubic phase and lowers switching power, enabling neuromorphic applications.

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Publication Details

Journal
Materials Advances
Published
2025-11-28
DOI
https://doi.org/10.1039/d5ma01008j
Primary Topic
Phase-change materials and chalcogenides
Type
article
Field-Weighted Citation Impact
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article

Controlling the phase transition dynamics of GeTe by Sn substitution for phase change memory, photodetection and neuromorphic devices

Materials Advances
Phase-change materials and chalcogenides
article

Controlling the phase transition dynamics of GeTe by Sn substitution for phase change memory, photodetection and neuromorphic devices

article en

Abstract

Sn-substituted GeTe enhances photodetectivity and memory performance. The transition temperature drops from ∼150 to ∼100 o C with high resistance contrast. Sn stabilizes the cubic phase and lowers switching power, enabling neuromorphic applications.

Materials AdvancesVol. 7(2)
National Institute of Technology Calicut (IN), Indian Institute of Technology Bhubaneswar (IN)
Affordable and clean energy
Openalex Percentile: Top 56%
Phase-change materials and chalcogenides
DOIOpen Access PDFOpenAlex
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Controlling the phase transition dynamics of GeTe by Sn substitution for phase change memory, photodetection and neuromorphic devices · Materials Advances (2025) | TGRS Research Map | TGRS