First-Principles Investigation of the Structural, Electronic and Optical Properties of Inorganic Cs2SnI6 Double Perovskite

Ab initio study using density functional theory (DFT) is carried out to explore the structural, electronic and optical properties of Cs2SnGeI6 compound. The structural properties of this compound are determined by using the approximation (GGA-PBE) asimplemented in WIEN2k code. The calculated lattice parameters of the Cs2SnGeI6 compound are found to be a = 12, 17 Å. The calculated electronic band structure and density of states indicate that the Cs2SnGeI6 compound has a semiconducting bahaviorwith narrow direct band gap of 0.43 eV and 0.35 eV with PBE and TB-mBJ exchange-correlation potentials. The different contributions of the electronic orbitals are discussed using the total and partial DOS with PBE and TB-mBJ approximations, which shows significant contributions from the I atom especially with p orbital. The optical properties such as dielectric function, refractive index, absorption coefficient and extinction coefficient are calculated and discussed. The findings in this study open new possibilities for developing optoelectronic and thermoelectric devices based on Cs2SnGeI6 halide double perovskites.

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Publication Details

Journal
Moroccan Journal of chemistry
Published
2024-09-20
DOI
https://doi.org/10.48317/imist.prsm/morjchem-v14i1.51446
Primary Topic
Perovskite Materials and Applications
Type
article
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article

First-Principles Investigation of the Structural, Electronic and Optical Properties of Inorganic Cs2SnI6 Double Perovskite

Moroccan Journal of chemistry
Perovskite Materials and Applications
article

First-Principles Investigation of the Structural, Electronic and Optical Properties of Inorganic Cs2SnI6 Double Perovskite

article en

Abstract

Ab initio study using density functional theory (DFT) is carried out to explore the structural, electronic and optical properties of Cs2SnGeI6 compound. The structural properties of this compound are determined by using the approximation (GGA-PBE) asimplemented in WIEN2k code. The calculated lattice parameters of the Cs2SnGeI6 compound are found to be a = 12, 17 Å. The calculated electronic band structure and density of states indicate that the Cs2SnGeI6 compound has a semiconducting bahaviorwith narrow direct band gap of 0.43 eV and 0.35 eV with PBE and TB-mBJ exchange-correlation potentials. The different contributions of the electronic orbitals are discussed using the total and partial DOS with PBE and TB-mBJ approximations, which shows significant contributions from the I atom especially with p orbital. The optical properties such as dielectric function, refractive index, absorption coefficient and extinction coefficient are calculated and discussed. The findings in this study open new possibilities for developing optoelectronic and thermoelectric devices based on Cs2SnGeI6 halide double perovskites.

Moroccan Journal of chemistry
Cadi Ayyad University (MA), Laboratoire de Recherche Scientifique (FR)
Openalex Percentile: Top 55%
Perovskite Materials and Applications
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