Impact of Various Core Materials on the Behavior of Through-Silicon via (TSV) Inductor in a DC/DC Converter

The paper discusses the design and modeling of a TSV-inductor for integration into an interleaved boost converter. The inductor features a topology of vertical TSV connected to rectangular horizontal connections, considering all parasitic effects from the various physical elements in the TSV-inductor. Using MATLAB software, different materials used in the TSV components are explored to enhance inductance values and quality factors, aiming to reduce energy losses. Validation of calculated electrical parameters from physical parameters and materials is done using TINA software through simulation of the interleaved boost converter circuit with the electrical circuit equivalent representation of the TSV-inductor.

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Publication Details

Journal
Russian Microelectronics
Published
2025-10-01
DOI
https://doi.org/10.1134/s1063739725600268
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
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article

Impact of Various Core Materials on the Behavior of Through-Silicon via (TSV) Inductor in a DC/DC Converter

Russian Microelectronics
3D IC and TSV technologies
article

Impact of Various Core Materials on the Behavior of Through-Silicon via (TSV) Inductor in a DC/DC Converter

article en

Abstract

The paper discusses the design and modeling of a TSV-inductor for integration into an interleaved boost converter. The inductor features a topology of vertical TSV connected to rectangular horizontal connections, considering all parasitic effects from the various physical elements in the TSV-inductor. Using MATLAB software, different materials used in the TSV components are explored to enhance inductance values and quality factors, aiming to reduce energy losses. Validation of calculated electrical parameters from physical parameters and materials is done using TINA software through simulation of the interleaved boost converter circuit with the electrical circuit equivalent representation of the TSV-inductor.

Russian MicroelectronicsVol. 54(5)
Sri Venkateswara University (IN), Sanskriti Samvardhan Mandal (IN), Dr. NTR University of Health Sciences (IN)
Affordable and clean energy
Openalex Percentile: Top 47%
3D IC and TSV technologies
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