Deformation of a MEMS Transducer Membrane with a Deposited Stressed Layer

Using the Ritz method, the maximum membrane deflection and the magnitude of mechanical stress are calculated depending on the geometric dimensions of the membrane and the parameters of the deposited SiO2 layer. A comparative assessment is carried out of the magnitude of deformation and mechanical stresses in the structure of an absolute pressure transducer with a polysilicon membrane radius of 50 μm and a sandwich structure of a MEMS acoustic pressure transducer consisting of layers of polysilicon and deposited SiO2 with a membrane radius of 300 µm, arising from the application of a layer of SiO2.

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Publication Details

Journal
Russian Microelectronics
Published
2025-10-01
DOI
https://doi.org/10.1134/s1063739725600700
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
Field-Weighted Citation Impact
0.00
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article

Deformation of a MEMS Transducer Membrane with a Deposited Stressed Layer

Russian Microelectronics
Advanced MEMS and NEMS Technologies
article

Deformation of a MEMS Transducer Membrane with a Deposited Stressed Layer

article en

Abstract

Using the Ritz method, the maximum membrane deflection and the magnitude of mechanical stress are calculated depending on the geometric dimensions of the membrane and the parameters of the deposited SiO2 layer. A comparative assessment is carried out of the magnitude of deformation and mechanical stresses in the structure of an absolute pressure transducer with a polysilicon membrane radius of 50 μm and a sandwich structure of a MEMS acoustic pressure transducer consisting of layers of polysilicon and deposited SiO2 with a membrane radius of 300 µm, arising from the application of a layer of SiO2.

Russian MicroelectronicsVol. 54(5)
Moscow Technological Institute (RU)
Openalex Percentile: Top 47%
Advanced MEMS and NEMS Technologies
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Deformation of a MEMS Transducer Membrane with a Deposited Stressed Layer · Russian Microelectronics (2025) | TGRS Research Map | TGRS