Preparation and application of advanced nanoporous GaN materials

Institutions

Publication Details

Journal
CrystEngComm
Published
2025-11-25
DOI
https://doi.org/10.1039/d5ce00925a
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Preparation and application of advanced nanoporous GaN materials

CrystEngComm
GaN-based semiconductor devices and materials
article

Preparation and application of advanced nanoporous GaN materials

article en

Abstract

No abstract available for this paper.
CrystEngCommVol. 28(2)
Shandong University (CN), Jinan Institute of Quantum Technology (CN), Shandong Jianzhu University (CN)
Openalex Percentile: Top 35%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Preparation and application of advanced nanoporous GaN materials · CrystEngComm (2025) | TGRS Research Map | TGRS