Indoor Characterization and Analysis of Reverse Breakdown Behavior of Solar Cells with Different Cell Architectures

With TOPCon cell technology becoming mainstream in 2025 and HJT/BC increasing their market share, too, cell strings now operate at higher voltages and current densities and exhibit different reverse-bias behavior than legacy PERC/Al-BSF. We experimentally compare reverse characteristics of five c-Si cell architectures (Al-BSF, PERC, TOPCon, HJT, IBC) using mini-modules and mini-strings measured from 100 to 1.300 W/m² at 25°C with a four-quadrant long-pulse flasher. TOPCon and HJT show pronounced hysteresis in the 1st quadrant but no relevant hysteresis in reverse; bifacial front and rear behavior is essentially identical. The key findings are that typical reverse breakdown voltage for Al-BSF is around -14 V, PERC between -21 and -24 V, HJT around -30 V, TOPCon between -44 and -49 V and for BC between -4 and -5 V. Illumination-dependent reverse current is strong for PERC, low for Al-BSF, very low for HJT and IBC, and overall low for TOPCon, considering more relevant voltages very low. Under full shading scenarios TOPCon and HJT strings with ≥24 cells per bypass diode are generally feasible as string voltages remain below reverse breakdown voltage onset. However, under partial shading (~50% coverage), PERC is most critical due to illumination-enhanced reverse current, while TOPCon/HJT dissipate less power. IBC breaks down early and therefore dissipates less power due to low breakdown voltage. Implications for hot-spot risk, bypass design, and applications with recurring shading (C&I, BaPV, BiPV) are discussed.

Publication Details

Journal
EU PVSEC
Published
2025-11-20
DOI
https://doi.org/10.4229/eupvsec2025/3co.11.5
Primary Topic
Silicon and Solar Cell Technologies
Type
article
Field-Weighted Citation Impact
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article

Indoor Characterization and Analysis of Reverse Breakdown Behavior of Solar Cells with Different Cell Architectures

EU PVSEC
Silicon and Solar Cell Technologies
article

Indoor Characterization and Analysis of Reverse Breakdown Behavior of Solar Cells with Different Cell Architectures

article en

Abstract

With TOPCon cell technology becoming mainstream in 2025 and HJT/BC increasing their market share, too, cell strings now operate at higher voltages and current densities and exhibit different reverse-bias behavior than legacy PERC/Al-BSF. We experimentally compare reverse characteristics of five c-Si cell architectures (Al-BSF, PERC, TOPCon, HJT, IBC) using mini-modules and mini-strings measured from 100 to 1.300 W/m² at 25°C with a four-quadrant long-pulse flasher. TOPCon and HJT show pronounced hysteresis in the 1st quadrant but no relevant hysteresis in reverse; bifacial front and rear behavior is essentially identical. The key findings are that typical reverse breakdown voltage for Al-BSF is around -14 V, PERC between -21 and -24 V, HJT around -30 V, TOPCon between -44 and -49 V and for BC between -4 and -5 V. Illumination-dependent reverse current is strong for PERC, low for Al-BSF, very low for HJT and IBC, and overall low for TOPCon, considering more relevant voltages very low. Under full shading scenarios TOPCon and HJT strings with ≥24 cells per bypass diode are generally feasible as string voltages remain below reverse breakdown voltage onset. However, under partial shading (~50% coverage), PERC is most critical due to illumination-enhanced reverse current, while TOPCon/HJT dissipate less power. IBC breaks down early and therefore dissipates less power due to low breakdown voltage. Implications for hot-spot risk, bypass design, and applications with recurring shading (C&I, BaPV, BiPV) are discussed.

EU PVSEC
Openalex Percentile: Top 48%
Silicon and Solar Cell Technologies
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