Investigation of Process Parameters on the Distribution of the Material Parameters in Cz-Crsytals Doped with Antimony

The market share of Cz mono-Si for the industrial mass production of solar cells has grown steadily in recent years. Casted Si has practically disappeared from the market. At the same time, a clear trend from p-type to n-type base material can be observed due to a progressive transition from PERC technology based on p-type cells to TOPCon solar cell structures based on n-type material (Fig.1). Phosphorus (P), arsenic (As), and antimony (Sb) are doping elements for n-type crystals, but until now, P-doped substrate crystals are standard. Here, too, a substitution of phosphorus with antimony as a doping element is emerging, similar to p-type substrate crystals, where the doping element boron was replaced with gallium. The advantage of Sb-doped crystals is the possibility of producing crystals with an almost axial homogeneous distribution of the specific resistivity by selecting appropriate process parameters. We examined the influence of the evaporation behavior of antimony during the crystal growth of Cz mono-Si in the resistivity range of interest for solar cells. We will present our main results in this conference contribution.