SiC Recrystallization by UV Nanopulsed Laser Annealing

This work explores the use of nanosecond UV pulsed laser annealing to induce localized recrystallization in amorphous silicon carbide (a-SiC) thin films, a strategic material for power electronics and photovoltaic applications. The experiment was conducted in a vacuum chamber (4.3 × 10⁻¹ mbar) using a 355 nm Q-switched DPSS laser, with a spot size of about 80 μm and power ranging from 1.15 to 3.95 W. The films, 450–500 nm thick and deposited on crystalline 4H-SiC substrates, were irradiated under different combinations of fluence and scan speed. TEM analysis revealed that, under optimal conditions, nanocrystalline domains (5–15 nm) formed up to about 50 nm in depth, while preserving the substrate integrity and avoiding ablation effects. The results demonstrate the feasibility of a compact, selective thermal treatment compatible with fabrication workflows, opening perspectives for advanced devices and novel electronic architectures.