Theoretical Insights through DFT into AgBiS₂ Thin Films Absorber for Photovoltaic Applications

AgBiS₂ has emerged as a promising absorber material for thin-film solar cell applications due to its earthabundant, non-toxic composition and tunable optical bandgap (Eg) (0.8–1.32 eV), making it suitable for low-cost and scalable production. This study comprehensively investigates the suitability of AgBiS₂ absorber for solar cells, emphasizing its structural, optoelectronic, and photovoltaic performance. Using density functional theory (DFT), we explore the electrical and optical properties, including Eg, absorption coefficient (α), dielectric constant, and refractive index. The result shows a very high ‘α’ of the order of ~106, and Eg (direct/indirect) calculated by MGGA and HSE method 1.18/0.63, and 1.55/0.99 respectively, which is very close to the experimental value ~1.0 eV. These insights highlight the potential of AgBiS₂ as a versatile absorber material, paving the way for advancements in thin film solar cell technologies.

Publication Details

Journal
EU PVSEC
Published
2025-11-20
DOI
https://doi.org/10.4229/eupvsec2025/2bv.1.6
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
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article

Theoretical Insights through DFT into AgBiS₂ Thin Films Absorber for Photovoltaic Applications

EU PVSEC
Chalcogenide Semiconductor Thin Films
article

Theoretical Insights through DFT into AgBiS₂ Thin Films Absorber for Photovoltaic Applications

article en

Abstract

AgBiS₂ has emerged as a promising absorber material for thin-film solar cell applications due to its earthabundant, non-toxic composition and tunable optical bandgap (Eg) (0.8–1.32 eV), making it suitable for low-cost and scalable production. This study comprehensively investigates the suitability of AgBiS₂ absorber for solar cells, emphasizing its structural, optoelectronic, and photovoltaic performance. Using density functional theory (DFT), we explore the electrical and optical properties, including Eg, absorption coefficient (α), dielectric constant, and refractive index. The result shows a very high ‘α’ of the order of ~106, and Eg (direct/indirect) calculated by MGGA and HSE method 1.18/0.63, and 1.55/0.99 respectively, which is very close to the experimental value ~1.0 eV. These insights highlight the potential of AgBiS₂ as a versatile absorber material, paving the way for advancements in thin film solar cell technologies.

EU PVSEC
Affordable and clean energy
Openalex Percentile: Top 48%
Chalcogenide Semiconductor Thin Films
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