Ultra-light RGO/MnFe ₂ O ₄ /PI aerogel with oriented pore structure and ultra-broadband microwave absorption

Textile memristor is the decision-making center of a bionic neuromorphic intelligent textile system and presents a promising opportunity for the incorporation of intricate information processing components within the architecture of flexible electronic textiles. This architecture, characterized by its cross-bar configuration and adaptability, positions textile memristors as a highly promising avenue for the future advancement of wearable electronic devices. Here, carbon fiber is chosen as electrode, and the memristor functional layer is made up of a high-performance and reliable BiOI/TiO₂ heterogeneous interface synthesized hydrothermally. The textile memristor exhibits an average set voltage of ≈0.78 V, set voltage deviation of 12.3%, long retention time (>10⁴ s) and high on/off ratio (>10⁵). Simultaneously, the observed self-rectification, room-temperature negative differential resistance (NDR) effect and biological synaptic phenomenon offer the possibility of further neuromorphic applications. Subsequently, the pressure sensor was integrated onto the textile memristor to construct an intelligent textile system. Especially through self built datasets and neural network calculations, the gesture recognition rate of the system reached 98.5%, maintaining a high level under the influence of 20% Gaussian noise (64%). This textile memristor arrays supply great memristive performance, steady device distribution, and good mechanical strength, indicating a reliable direction for the next generation of integrated textile electrical systems.