Growth and Optimisation of Boron Containing III-V Alloys on (001)-Si via Metalorganic Vapour Phase Epitaxy

The ultimate goal of this work was the growth and optimization of boron containing III-V alloys on (001)-Si substrates with a secondary emphasis on nitride-antimonide-based heterostructures for telecommunication applications. During this study, the growth and optimization processes of several boron containing alloys were presented additionally with some novel developments on nitride-antimonide-based semiconductor heterostructures. This work summarises the most pivotal results obtained during the present work, spanning a range of novel alloy compositions utilizing a variety of metalorganic precursors.