Development of a 13 kV SiC-MOSFET-based pulsed power supply for evaluating metallic materials under high electric fields

To perform high electric field experiments for evaluating the vacuum breakdown characteristics of accelerator materials, we have developed a high-voltage pulsed power supply capable of providing a 10 kV peak voltage, 1 µs pulse width, and 1 kHz repetition rate. This system is designed to reliably apply intense fields to metallic electrodes with load capacitances up to 650 pF. To ensure operational reliability and prevent potential equipment damage, it incorporates an interlock system that halts operation when load short-circuits or external interlock signals are detected. By employing a 13 kV SiC-MOSFET developed under the Tsukuba Power Electronics Constellation (TPEC), we reduced the number of components and improved overall reliability. This report presents the technical features and performance of the power supply, demonstrating that it meets the operational specifications necessary for evaluating candidate materials under high electric field conditions.

Publication Details

Journal
JACOW
Published
2025-11-05
DOI
https://doi.org/10.18429/jacow-ipac2025-wepb064
Primary Topic
Vacuum and Plasma Arcs
Type
article
Field-Weighted Citation Impact
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article

Development of a 13 kV SiC-MOSFET-based pulsed power supply for evaluating metallic materials under high electric fields

JACOW
Vacuum and Plasma Arcs
article

Development of a 13 kV SiC-MOSFET-based pulsed power supply for evaluating metallic materials under high electric fields

article en

Abstract

To perform high electric field experiments for evaluating the vacuum breakdown characteristics of accelerator materials, we have developed a high-voltage pulsed power supply capable of providing a 10 kV peak voltage, 1 µs pulse width, and 1 kHz repetition rate. This system is designed to reliably apply intense fields to metallic electrodes with load capacitances up to 650 pF. To ensure operational reliability and prevent potential equipment damage, it incorporates an interlock system that halts operation when load short-circuits or external interlock signals are detected. By employing a 13 kV SiC-MOSFET developed under the Tsukuba Power Electronics Constellation (TPEC), we reduced the number of components and improved overall reliability. This report presents the technical features and performance of the power supply, demonstrating that it meets the operational specifications necessary for evaluating candidate materials under high electric field conditions.

JACOW
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Vacuum and Plasma Arcs
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Development of a 13 kV SiC-MOSFET-based pulsed power supply for evaluating metallic materials under high electric fields · JACOW (2025) | TGRS Research Map | TGRS