Thermal Design of AlGaN/GaN HEMTs: Back Barriers and Buffer Layers

Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-10-28
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00
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article

Thermal Design of AlGaN/GaN HEMTs: Back Barriers and Buffer Layers

SPIRE - Sciences Po Institutional REpository
GaN-based semiconductor devices and materials
article

Thermal Design of AlGaN/GaN HEMTs: Back Barriers and Buffer Layers

article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Openalex Percentile: Top 36%
GaN-based semiconductor devices and materials
Open Access PDFOpenAlex
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Thermal Design of AlGaN/GaN HEMTs: Back Barriers and Buffer Layers · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS