Structural, Compositional, and Photoluminescence Properties of CsPbBr<sub>3</sub> Thin Films Grown by Single-source Thermal Vacuum Chemical Vapor Deposition

The single-source thermal vacuum evaporation (SSTVE) approach was adopted in this study to obtain inorganic perovskite thin films. The structural, morphological, compositional, and photoluminescent properties of the obtained layers were comprehensively investigated. X-ray diffraction analysis confirmed a microcrystalline structure with predominant CsPbBr3 and Cs4PbBr6 phases. Scanning electron microscopy images revealed a uniform polycrystalline morphology with crystallite sizes suitable for optoelectronic applications. Energy-dispersive X-ray spectroscopy indicated a Cs-rich composition, which was attributed to the differences in precursor vaporization behavior. The synthesized films exhibited strong photoluminescence with a distinct emission peak corresponding to the bandgap energy, confirming their potential as photoactive layers for light-emitting diodes. The SSTVE method provides a solvent-free, scalable route for fabricating high-quality inorganic perovskite films, suitable for industrial optoelectronic device manufacturing.

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Publication Details

Journal
e-Journal of Surface Science and Nanotechnology
Published
2025-11-05
DOI
https://doi.org/10.1380/ejssnt.2025-051
Primary Topic
Perovskite Materials and Applications
Type
article
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article

Structural, Compositional, and Photoluminescence Properties of CsPbBr3 Thin Films Grown by Single-source Thermal Vacuum Chemical Vapor Deposition

e-Journal of Surface Science and Nanotechnology
Perovskite Materials and Applications
article

Structural, Compositional, and Photoluminescence Properties of CsPbBr3 Thin Films Grown by Single-source Thermal Vacuum Chemical Vapor Deposition

article en

Abstract

The single-source thermal vacuum evaporation (SSTVE) approach was adopted in this study to obtain inorganic perovskite thin films. The structural, morphological, compositional, and photoluminescent properties of the obtained layers were comprehensively investigated. X-ray diffraction analysis confirmed a microcrystalline structure with predominant CsPbBr3 and Cs4PbBr6 phases. Scanning electron microscopy images revealed a uniform polycrystalline morphology with crystallite sizes suitable for optoelectronic applications. Energy-dispersive X-ray spectroscopy indicated a Cs-rich composition, which was attributed to the differences in precursor vaporization behavior. The synthesized films exhibited strong photoluminescence with a distinct emission peak corresponding to the bandgap energy, confirming their potential as photoactive layers for light-emitting diodes. The SSTVE method provides a solvent-free, scalable route for fabricating high-quality inorganic perovskite films, suitable for industrial optoelectronic device manufacturing.

e-Journal of Surface Science and NanotechnologyVol. 23(4)
Academy of Sciences Republic of Uzbekistan (UZ), Pedagogical University (MZ), Tashkent State Technical University named after Islam Karimov (UZ)
Openalex Percentile: Top 49%
Perovskite Materials and Applications
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