Progress and prospects of 2-D material-based self-powered UV photodetectors: Mechanisms and device architectures

Self-powered ultraviolet photodetectors have gained significant attention for their potential in low-power, compact, and high-performance optoelectronic applications. Unlike conventional photodetectors requiring external bias, self-powered devices exploit the built-in electric fields at material junctions to facilitate charge separation, reducing dark current and enhancing detectivity. This review comprehensively explores the recent advancements in self-powered UV photodetectors enabled by two-dimensional materials such as MoS 2 , GaN, ZnO, and h-BN. These materials offer tunable band gaps, large surface areas, high carrier mobility, and defect-free interfaces, making them ideal candidates for flexible and efficient UV detection. The review systematically categorizes device architectures into p–n homojunctions, p–n heterojunctions, and metal–semiconductor Schottky junctions, highlighting their respective mechanisms, strengths, and limitations. The review also benchmarks key performance metrics such as responsivity, external quantum efficiency, rise/fall time, and detectivity across various 2-D heterostructure-based devices. Finally, we discuss the role of these detectors in enabling next-generation optical wireless communication, UV imaging, and simultaneous information and power transmission. Despite significant progress being made in achieving high responsivity and rapid switching, persistent challenges remain, such as improving built-in electric fields, mitigating interface defects, and achieving uniform high-speed and high-sensitivity performance. Adding to these, this review also includes a summary of the recent patents published in the field of self-powered photodetection. The review concludes by outlining potential strategies and new trends for next-generation device design, including vertical nanostructure engineering and anti-reflective coatings, reinforcing the promise of 2-D materials in reshaping UV photodetection technologies. • Explores 2D material-based self-powered UV photodetectors for low-power, high-performance optoelectronic applications. • Highlights key performance metrics: responsivity, EQE, response speed, and detectivity. • Discusses benefits of 2D materials: tuneable bandgap, high mobility, minimal defects. • Reviews cutting-edge applications and patents: Optical Wireless Communication, UV imaging, and Simultaneous Information and Power Transmission.