Asymmetric SiC trench MOSFET with N-base super barrier rectifier embedded for switching characteristic optimization

To suppress the turn-on of the parasitic body diode in SiC MOSFET, researchers have proposed various solutions. Among them, in this paper, a novel asymmetric SiC trench MOSFET with embedded N-base super barrier rectifier (ATN-SBR-MOS) is proposed and investigated. Benefiting from the lower threshold voltage of the SBR, the turn-on voltage (VF) is reduced by 63%, thus the bipolar degradation issue is effectively eliminated. Moreover, the gate charge (QG) and reverse recovery charge (QRR) are shrunk by 59% and 36% respectively. Both of the switching characteristic are effectively improved, demonstrating significant potential for implementation in power device applications.