Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs
Institutions
Université Toulouse III - Paul Sabatier (FR)
Laboratoire d'Analyse et d'Architecture des Systèmes (FR)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
Direction de la Recherche Technologique (FR)
Publication Details
Journal
HAL (Le Centre pour la Communication Scientifique Directe)
Published
2025-11-10
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article
Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs
Journal
HAL (Le Centre pour la Communication Scientifique Directe)
Topics
GaN-based semiconductor devices and materials
article
Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs
article en
Abstract
No abstract available for this paper.
Publication Tag
HAL (Le Centre pour la Communication Scientifique Directe)
Institutions
Université Toulouse III - Paul Sabatier (FR), Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Direction de la Recherche Technologique (FR)
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Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs · HAL (Le Centre pour la Communication Scientifique Directe) (2025) | TGRS Research Map | TGRS