Crystal and Electronic Structure of Ba12Ga15As22

The novel ternary Zintl phase Ba12Ga15As22 was synthesized and structurally characterized. Structural data collected via single-crystal X-ray diffraction methods revealed the presence of homoatomic [Ga2]4+ bonds embedded within chains of edge- and corner-sharing [GaAs4] tetrahedra. Synchrotron powder diffraction data, processed via Rietveld refinement, further confirm the structural model. Ba12Ga15As22 crystallizes in the monoclinic crystal system with space group P21/c (a = 13.3334(10), b = 20.6392(16), c = 20.0336(15), β = 108.7168(14)) and adopts a previously unreported structure type. Ba12Ga15As22 is heavily disorder and its charge-balance can be described using the Zintl concept as follows: Ba12Ga15As22 = (Ba2+)12(Ga3+)12([Ga2]4+)1.5(As3–)22. Electronic structure calculations were performed to further investigate the bonding and electronic properties, motivated by expectation of semiconducting properties and suitability for thermoelectric applications. Ba12Ga15As22 was found to exhibit a theoretical band gap of approximately 0.61 eV.

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Publication Details

Journal
Structural Dynamics
Published
2025-09-01
DOI
https://doi.org/10.1063/4.0001126
Primary Topic
Refrigeration and Air Conditioning Technologies
Type
article
Field-Weighted Citation Impact
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article

Crystal and Electronic Structure of Ba12Ga15As22

Structural Dynamics
Refrigeration and Air Conditioning Technologies
article

Crystal and Electronic Structure of Ba12Ga15As22

article en

Abstract

The novel ternary Zintl phase Ba12Ga15As22 was synthesized and structurally characterized. Structural data collected via single-crystal X-ray diffraction methods revealed the presence of homoatomic [Ga2]4+ bonds embedded within chains of edge- and corner-sharing [GaAs4] tetrahedra. Synchrotron powder diffraction data, processed via Rietveld refinement, further confirm the structural model. Ba12Ga15As22 crystallizes in the monoclinic crystal system with space group P21/c (a = 13.3334(10), b = 20.6392(16), c = 20.0336(15), β = 108.7168(14)) and adopts a previously unreported structure type. Ba12Ga15As22 is heavily disorder and its charge-balance can be described using the Zintl concept as follows: Ba12Ga15As22 = (Ba2+)12(Ga3+)12([Ga2]4+)1.5(As3–)22. Electronic structure calculations were performed to further investigate the bonding and electronic properties, motivated by expectation of semiconducting properties and suitability for thermoelectric applications. Ba12Ga15As22 was found to exhibit a theoretical band gap of approximately 0.61 eV.

Structural DynamicsVol. 12(5_Supplement)
Louisiana State University (US)
Openalex Percentile: Top 51%
Refrigeration and Air Conditioning Technologies
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